unisonic technologies co., ltd 2n90z power mosfet www.unisonic.com.tw 1 of 6 copyright ? 2012 unisonic technologies co., ltd qw-r502-848.a 2 a , 900v n-channel power mosfet ? description the utc 2n90z is an n-channel mode power mosfet using utc?s advanced technology to provide costumers with planar stripe and dmos technology. this technology specialized in allowing a minimum on-state resistance and supe rior switching performance. it also can withstand high energy pulse in the avalanche and commutation mode. the utc 2n90z is universally applied in high efficiency switch mode power supply. ? features * r ds(on) = 7.2 ? @v gs = 10 v * typically 5.5 pf low c rss * high switching speed * typically 12nc low gate charge * improved dv/dt capability * 100% avalanche tested ? symbol to-220f 1 ? ordering information ordering number package pin assignment packing lead free halogen free 1 2 3 2n90zl-tf3-t 2N90ZG-TF3-T to-220f g d s tube note: pin assignment: g: gate d: drain s: source
2n90z power mosfet unisonic technologies co., ltd 2 of 6 www.unisonic.com.tw qw-r502-848.a ? absolute maximum ratings (t c =25c, unless otherwise specified) parameter symbol ratings unit drain-source voltage (note 2) v dss 900 v gate-source voltage v gss 20 v drain current continuous i d 2.2 a pulsed (note 2) i dm 8.8 a avalanche current (note 2) i ar 2.2 a avalanche energy single pulsed (note 3) e as 170 mj repetitive (note 2) e ar 8.5 mj peak diode recovery dv/dt (note 4) dv/dt 4.0 v/ns power dissipation p d 25 w junction temperature t j +150 c storage temperature t stg -55~+150 c notes: 1. absolute maximu m ratings are those values beyond which the device could be permanently damaged. absolute maximum ratings are stress ratings only and functional device oper ation is not implied. 2. repetitive rating: pulse width lim ited by maximum junction temperature 3. l = 65mh, i as = 2.2a, v dd = 50v, r g = 25 ? , starting t j = 25c 4. i sd 2.2a, di/dt 200a/s, v dd bv dss , starting t j = 25c ? thermal data parameter symbol ratings unit junction to ambient ja 62.5 /w junction to case jc 5 /w
2n90z power mosfet unisonic technologies co., ltd 3 of 6 www.unisonic.com.tw qw-r502-848.a ? electrical characteristics (t c =25c, unless otherwise specified) parameter symbol test conditions min typ max unit off characteristics drain-source breakdown voltage bv dss i d =250a, v gs =0v 900 v breakdown voltage temperature coefficient bv dss /t j reference to 25c, i d =250a 1.0 v/c drain-source leakage current i dss v ds =900v, v gs =0v 10 a v ds =720v, t c =125c 100 gate- source leakage current forward i gss v gs =+20v, v ds =0v 5 a reverse v gs =-20v, v ds =0v -5 a on characteristics gate threshold voltage v gs ( th ) v ds =v gs , i d =250a 3.0 5.0 v static drain-source on-state resistance r ds ( on ) v gs =10v, i d =1.1a 5.6 7.2 ? forward transconductance g fs v ds =50v, i d =1.1a (note 1) 2.0 s dynamic parameters input capacitance c iss v gs =0v, v ds =25v, f=1.0mhz 390 500 pf output capacitance c oss 45 60 pf reverse transfer capacitance c rss 5.5 7.0 pf switching parameters total gate charge q g v gs =10v, v ds =720v, i d =2.2a (note 1,2) 12 15 nc gate to source charge q gs 2.8 nc gate to drain charge q gd 6.1 nc turn-on delay time t d ( on ) v dd =450v, i d =2.2a, r g =25 ? (note 1,2) 15 40 ns rise time t r 35 80 ns turn-off delay time t d ( off ) 20 50 ns fall-time t f 30 70 ns source- drain diode ratings and characteristics maximum continuous drain-source diode forward current i s 2.2 a maximum pulsed drain-source diode forward current i sm 8.8 a drain-source diode forward voltage v sd i s =2.2a, v gs =0v 1.4 v reverse recovery time t r r i s =2.2a,v gs =0v,di f /dt=100a/s (note 1) 400 ns reverse recovery charge q rr 1.6 c note: 1. pulse test: pulse width 300s, duty cycle 2% 2. essentially independent of operating temperature
2n90z power mosfet unisonic technologies co., ltd 4 of 6 www.unisonic.com.tw qw-r502-848.a ? test circuits and waveforms same type as d.u.t. l v dd driver v gs r g - v ds d.u.t. + * dv/dt controlled by r g * i sd controlled by pulse period * d.u.t.-device under test - + peak diode recovery dv/dt test circuit p. w. period d= v gs (driver) i sd (d.u.t.) i fm , body diode forward current di/dt i rm body diode reverse current body diode recovery dv/dt body diode forward voltage drop v dd 10v v ds (d.u.t.) v gs = p.w. period peak diode recovery dv/dt waveforms
2n90z power mosfet unisonic technologies co., ltd 5 of 6 www.unisonic.com.tw qw-r502-848.a ? test circuits and waveforms (cont.) v ds 90% 10% v gs t d(on) t r t d(off) t f switching test circuit switching waveforms 10v charge q gs q gd q g v gs gate charge test circuit gate charge waveform v dd t p time bv dss i as i d(t) v ds(t) unclamped inductive switching test circuit unclamped inductive switching waveforms
2n90z power mosfet unisonic technologies co., ltd 6 of 6 www.unisonic.com.tw qw-r502-848.a ? typical characteristics drain current vs. drain-source breakdown voltage drain current, i d (a) drain-source breakdown voltage, bv dss (v) 1 0 drain current vs. gate threshold voltage drain current, i d (a) gate threshold voltage, v th (v) 34 6 25 0 50 100 150 200 250 300 0 250 750 1000 1250 500 0 50 100 150 200 250 300 drain current, i d (a) drain current, i d (a) utc assumes no responsibility for equipment failures that result from using products at values that exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges, or other parameters) listed in products specifications of any and all utc products described or contained herein. utc products are not designed for use in life support appliances, devices or systems where malfunction of these products can be reasonably expected to result in personal injury. reproduction in whole or in part is prohibited without the prior writ ten consent of the copyright owner. the information presented in this document does not form part of any quotation or contract, is believed to be accurate and reliable and may be changed without notice.
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